Switching the fracture toughness of single-crystal ZnS using light irradiation

An enormous change in the dislocation-mediated plasticity has been found a bulk semiconductor that exhibits photoplastic effect. Herein, we report UV (365 nm) light irradiation during mechanical testing dramatically decreases fracture toughness of ZnS. The crack tip on (001) single-crystal ZnS, as measured by near-tip opening displacement method, is increased ?45% complete darkness compared to light. increase attributed significant dislocation mobility darkness, explained shielding model. Our finding suggests route toward controlling semiconductors tuning irradiation.